This phenomenon is referred as thermal inductance in the report.
2.
However, rather than considering the specified structure of thermoelectric devices, it is considered that the thermal inductance that occurs in GaN devices with a p n junction.
3.
In addition, it is expected that thermal inductance phenomena exist more widely exist in nonhomogeneous materials and in the field of thermal analysis under energy changes in very short duration.
4.
With the combination of the thermal resistance, the thermal capacitance, and the thermal inductance, it is expected that their assumption can promote the thermal analysis of high-frequency GaN devices.
5.
Bosworth later extended the experiments to study the thermal mutual inductance; however, he did not report on the thermal inductance in a heat-transfer system with the exception of a fluid flow.
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